EDJ2108EEBG-GN-F
ELPIDA MEMORY INC
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明DDR3L DRAM, 256MX8, 20ns, CMOS, PBGA78
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width9 mm
- Length11 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B78
- Memory Width8
- Organization256MX8
- Package CodeTFBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density2147483648 bit
- Memory IC TypeDDR3L DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max20 ns
- Number of Ports1
- Number of Words268435456 words
- Seated Height-Max1.2 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max175 mA
- Number of Functions1
- Number of Terminals78
- Standby Current-Max0.012 Amp
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA78,9X13,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.45 V
- Supply Voltage-Min (Vsup)1.283 V
- Supply Voltage-Nom (Vsup)1.35 V
- Clock Frequency-Max (fCLK)800 MHz
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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EDJ2108EEBG-GN-F