ELECTRONIC DESIGNS INC EDI8M8512C45P6B | 搜芯易Sourcengine

ELECTRONIC DESIGNS INC EDI8M8512C45P6B

生命周期状态
Discontinued
说明
SRAM Module, 512KX8, 45ns, CMOS, PDMA32
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
15.24
Length (mm)
43.18
JESD-30 Code
R-PDMA-T32
Memory Width
8
Package Code
DIP
Output Enable
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Memory Organization
512KX8
Number of Functions
1
Number of Terminals
32
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
45
Number of Words Code
512K
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
8.0518
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
524288
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-STD-883 Class B (Modified)