ELECTRONIC DESIGNS INC EDI8L3265C20AI | 搜芯易Sourcengine

ELECTRONIC DESIGNS INC EDI8L3265C20AI

生命周期状态
Transferred
说明
SRAM Module, 64KX32, 20ns, CMOS, PQCC68
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PQCC-J68
Memory Width
32
Package Code
QCCJ
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e0
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
QUAD
Additional Feature
CONFIGURABLE AS 128K X 16
Memory Organization
64KX32
Number of Functions
1
Number of Terminals
68
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
20
Number of Words Code
64K
Memory Density (bits)
2097152
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.25
Supply Voltage-Min (V)
4.75
Supply Voltage-Nom (V)
5
Number of Words (words)
65536
Standby Current-Max (A)
0.02
Standby Voltage-Min (V)
4.75
Supply Current-Max (mA)
420
Package Equivalence Code
LDCC68,1.0SQ
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40