EDI8L32128C20AI
Microsemi Corporation
- 生命周期状态Transferred
- 说明SRAM Memory
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)24.2824
- Length (mm)24.2824
- JESD-30 CodeS-PQCC-J68
- Memory Width32
- Package CodeQCCJ
- Package ShapeSQUARE
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory IC TypeSRAM MODULE
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionQUAD
- Additional FeatureALSO CONFIGURABLE AS 512K X 8; LG-MAX; WD-MAX
- Memory Organization128KX32
- Number of Functions1
- Number of Terminals68
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)20
- Number of Words Code128K
- Memory Density (bits)4194304
- Package Body MaterialPLASTIC/EPOXY
- Alternate Memory Width16
- Seated Height-Max (mm)4.572
- Supply Voltage-Max (V)5.25
- Supply Voltage-Min (V)4.75
- Supply Voltage-Nom (V)5
- Number of Words (words)131072
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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