ELECTRONIC DESIGNS INC EDI8F8512C85BSI | 搜芯易Sourcengine

ELECTRONIC DESIGNS INC EDI8F8512C85BSI

生命周期状态
Transferred
说明
SRAM Module, 512KX8, 85ns, CMOS
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-XSMA-T36
Memory Width
8
Output Enable
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
SINGLE
Additional Feature
TTL COMPATIBLE INPUT OUTPUT
Memory Organization
512KX8
Number of Functions
1
Number of Terminals
36
Access Time-Max (ns)
85
Number of Words Code
512K
Memory Density (bits)
4194304
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
524288
Standby Current-Max (A)
0.005
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
130
Package Equivalence Code
SIP36
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40