ELECTRONIC DESIGNS INC EDI8F16512LP100BSC | 搜芯易Sourcengine

ELECTRONIC DESIGNS INC EDI8F16512LP100BSC

生命周期状态
Discontinued
说明
SRAM Module, 512KX16, 100ns, CMOS
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
JESD-30 Code
R-XSMA-T45
Memory Width
16
Output Enable
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
SINGLE
Memory Organization
512KX16
Number of Functions
1
Number of Terminals
45
Access Time-Max (ns)
100
Number of Words Code
512K
Memory Density (bits)
8388608
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
524288
Standby Voltage-Min (V)
2
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0