ELECTRONIC DESIGNS INC EDI441024C80NB | 搜芯易Sourcengine

ELECTRONIC DESIGNS INC EDI441024C80NB

生命周期状态
Transferred
说明
Fast Page DRAM, 1MX4, 80ns, CMOS, CDSO20
类别
Semiconductors Memory ICs DRAMs FAST PAGE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Access Mode
FAST PAGE
JESD-30 Code
R-CDSO-J20
Memory Width
4
Package Code
SOJ
Self Refresh
NO
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e0
Memory IC Type
FAST PAGE DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Number of Ports
1
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Memory Organization
1MX4
Number of Functions
1
Number of Terminals
20
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
80
Number of Words Code
1M
Memory Density (bits)
4194304
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
1048576
Package Equivalence Code
SOJ20/26,.34
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
38535Q/M;38534H;883B