EDI414097C100LZM
ELECTRONIC DESIGNS INC
- 生命周期状态Transferred
- 说明Fast Page DRAM, 4MX1, 100ns, CMOS, CZIP20
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeSEPARATE
- TechnologyCMOS
- Access ModeFAST PAGE
- JESD-30 CodeR-CZIP-T20
- Memory Width1
- Package CodeZIP
- Self RefreshNO
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee0
- Memory IC TypeFAST PAGE DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles2048
- Number of Ports1
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Temperature GradeMILITARY
- Terminal PositionZIG-ZAG
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Memory Organization4MX1
- Number of Functions1
- Number of Terminals20
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)100
- Number of Words Code4M
- Memory Density (bits)4194304
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Output Characteristics3-STATE
- Supply Voltage-Max (V)5.5
- Supply Voltage-Min (V)4.5
- Supply Voltage-Nom (V)5
- Number of Words (words)4194304
- Standby Current-Max (A)0.002
- Supply Current-Max (mA)100
- Package Equivalence CodeZIP20,.1
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-55
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EDI414097C100LZM