ELECTRONIC DESIGNS INC EDI414096C150NM | 搜芯易Sourcengine

ELECTRONIC DESIGNS INC EDI414096C150NM

生命周期状态
Discontinued
说明
DRAM, 4MX1, 150ns, CMOS, CDSO20
类别
Semiconductors Memory ICs DRAMs OTHER DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
CMOS
JESD-30 Code
R-CDSO-J20
Memory Width
1
Package Code
SOJ
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory IC Type
OTHER DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
2048
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Memory Organization
4MX1
Number of Functions
1
Number of Terminals
20
Access Time-Max (ns)
150
Number of Words Code
4M
Memory Density (bits)
4194304
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
4194304
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55