ELECTRONIC DESIGNS INC EDI414096C100NB | 搜芯易Sourcengine

ELECTRONIC DESIGNS INC EDI414096C100NB

生命周期状态
Discontinued
说明
DRAM, 4MX1, 100ns, CMOS, CDSO20
类别
Semiconductors Memory ICs DRAMs OTHER DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
CMOS
JESD-30 Code
R-CDSO-J20
Memory Width
1
Organization
4MX1
Package Code
SOJ
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory Density
4194304 bit
Memory IC Type
OTHER DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
2048
Terminal Pitch
1.27 mm
Access Time-Max
100 ns
Number of Ports
1
Number of Words
4194304 words
Screening Level
38535Q/M;38534H;883B
Terminal Finish
TIN LEAD
Temperature Grade
MILITARY
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Number of Functions
1
Number of Terminals
20
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Output Characteristics
3-STATE
Package Equivalence Code
SOJ20/26,.34
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-55 Cel
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V