EDI411024C100NB
ELECTRONIC DESIGNS INC
- 生命周期状态Discontinued
- 说明Fast Page DRAM, 1MX1, 100ns, CMOS, CDSO20
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeSEPARATE
- TechnologyCMOS
- Access ModeFAST PAGE
- JESD-30 CodeR-CDSO-J20
- Memory Width1
- Organization1MX1
- Package CodeSOJ
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory Density1048576 bit
- Memory IC TypeFAST PAGE DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles1024
- Terminal Pitch1.27 mm
- Access Time-Max100 ns
- Number of Ports1
- Number of Words1048576 words
- Screening Level38535Q/M;38534H;883B
- Terminal FinishTIN LEAD
- Temperature GradeMILITARY
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Supply Current-Max80 mA
- Number of Functions1
- Number of Terminals20
- Standby Current-Max0.0005 Amp
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Output Characteristics3-STATE
- Package Equivalence CodeSOJ20/26,.34
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-55 Cel
- Supply Voltage-Max (Vsup)5.5 V
- Supply Voltage-Min (Vsup)4.5 V
- Supply Voltage-Nom (Vsup)5 V
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EDI411024C100NB