ELECTRONIC DESIGNS INC EDI2GG43264V11D | 搜芯易Sourcengine

ELECTRONIC DESIGNS INC EDI2GG43264V11D

生命周期状态
Transferred
说明
SRAM Module, 256KX32, 11ns, CMOS, PDMA120
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N120
Memory Width
32
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
SRAM MODULE
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
256KX32
Number of Terminals
120
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
11
Number of Words Code
256K
Memory Density (bits)
8388608
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
3.3
Number of Words (words)
262144
Standby Current-Max (A)
0.02
Standby Voltage-Min (V)
3.14
Supply Current-Max (mA)
480
Package Equivalence Code
DIMM120
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0