EDF8164A3MA-GD-F-R
Micron Technology
- 生命周期状态Discontinued
- 说明LPDDR3 DRAM, 128MX64, CMOS, PBGA253
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width11 mm
- Length11 mm
- TechnologyCMOS
- Access ModeSINGLE BANK PAGE BURST
- JESD-30 CodeS-PBGA-B253
- Memory Width64
- Organization128MX64
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeSQUARE
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density8589934592 bit
- Memory IC TypeLPDDR3 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.5 mm
- Number of Ports1
- Number of Words134217728 words
- Seated Height-Max0.85 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
- Number of Functions1
- Number of Terminals253
- Number of Words Code128M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-30 Cel
- Supply Voltage-Max (Vsup)1.3 V
- Supply Voltage-Min (Vsup)1.14 V
- Supply Voltage-Nom (Vsup)1.2 V
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EDF8164A3MA-GD-F-R