EDE2108AASE-8G-E
ELPIDA MEMORY INC
- 生命周期状态Discontinued
- 说明DDR2 DRAM, 256MX8, CMOS, PBGA68
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width10.2 mm
- Length20.7 mm
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B68
- Memory Width8
- Organization256MX8
- Package CodeTFBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density2147483648 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words268435456 words
- Terminal FinishTIN SILVER COPPER
- Seated Height-Max1.12 mm
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals68
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
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EDE2108AASE-8G-E