EDBM164B1PD-1D-F
Micron Technology
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明DDR2 DRAM, 192MX64, CMOS, PBGA220
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width14 mm
- Length14 mm
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeS-PBGA-B220
- Memory Width64
- Organization192MX64
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeSQUARE
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density12884901888 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.5 mm
- Number of Ports1
- Number of Words201326592 words
- Seated Height-Max0.85 mm
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
- Number of Functions1
- Number of Terminals220
- Number of Words Code192M
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (Vsup)1.3 V
- Supply Voltage-Min (Vsup)1.14 V
- Supply Voltage-Nom (Vsup)1.2 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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EDBM164B1PD-1D-F