Micron Technology EDB8064B1PB-6D-F | 搜芯易Sourcengine

Micron Technology EDB8064B1PB-6D-F

生命周期状态
Active-Unconfirmed
说明
DDR2 DRAM, 256MX32, CMOS, PBGA216
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Width (mm)
12
Access Mode
MULTI BANK PAGE BURST
Length (mm)
12
JESD-30 Code
S-PBGA-B216
Memory Width
32
Package Code
VFBGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
Memory Organization
256MX32
Number of Functions
1
Number of Terminals
216
Terminal Pitch (mm)
0.4
Number of Words Code
256M
Memory Density (bits)
8589934592
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.3
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
268435456