EDB4064B3PB-1D-F
Micron Technology
- 生命周期状态Active
- 说明DDR2 DRAM, 64MX64, CMOS, PBGA216
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- TechnologyCMOS
- Width (mm)12
- Access ModeMULTI BANK PAGE BURST
- Length (mm)12
- JESD-30 CodeS-PBGA-B216
- Memory Width64
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeSQUARE
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY
- Memory Organization64MX64
- Number of Functions1
- Number of Terminals216
- Terminal Pitch (mm)0.4
- Number of Words Code64M
- Memory Density (bits)4294967296
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)0.8
- Supply Voltage-Max (V)1.3
- Supply Voltage-Min (V)1.14
- Supply Voltage-Nom (V)1.2
- Number of Words (words)67108864
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EDB4064B3PB-1D-F