EDB2432B4MA-1DAAT-F-R
Micron Technology
- 生命周期状态EOL
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明MICRON - EDB2432B4MA-1DAAT-F-R - DRAM, LPDDR2, 2 Gbit, 64M x 32bit, 533 MHz, VFBGA, 134 Pins
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width10 mm
- Length11.5 mm
- TechnologyCMOS
- Access ModeSINGLE BANK PAGE BURST
- JESD-30 CodeR-PBGA-B134
- Memory Width32
- Organization64MX32
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density2147483648 bit
- Memory IC TypeLPDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.65 mm
- Number of Ports1
- Number of Words67108864 words
- Seated Height-Max1 mm
- Terminal PositionBOTTOM
- Additional FeatureSELF REFRESH; IT ALSO REQUIRES 1.8V NOM
- Number of Functions1
- Number of Terminals134
- Number of Words Code64M
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (Vsup)1.3 V
- Supply Voltage-Min (Vsup)1.14 V
- Supply Voltage-Nom (Vsup)1.2 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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EDB2432B4MA-1DAAT-F-R