NTE Electronics Inc. ECG3312 | 搜芯易Sourcengine

NTE Electronics Inc. ECG3312

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Fall Time-Max (tf)
500 ns
Rise Time-Max (tr)
600 ns
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
20 V
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
100 W
Gate-emitter Thr Voltage-Max
6 V
Collector-emitter Voltage-Max
1200 V