UNITED MONOLITHIC SEMICONDUCTOR SAS EC2612-99F/00 | 搜芯易Sourcengine

UNITED MONOLITHIC SEMICONDUCTOR SAS EC2612-99F/00

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Silicon, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.40
SB Code
8541.21.00.40

JESD-30 Code
R-XUUC-N4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KA BAND
Power Gain-Min (Gp) (dB)
8
Drain Current-Max (ID) (A)
0.06
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
3.5
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
0.28