Micron Technology EBR51EC8ABKD-AE | 搜芯易Sourcengine

Micron Technology EBR51EC8ABKD-AE

生命周期状态
Discontinued
说明
Rambus DRAM Module, 256MX18, 32ns, CMOS, PDMA232
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N232
Memory Width
18
Organization
256MX18
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
4831838208 bit
Memory IC Type
RAMBUS DRAM MODULE
Terminal Pitch
1 mm
Access Time-Max
32 ns
Number of Words
268435456 words
Terminal Position
DUAL
Number of Terminals
232
Number of Words Code
256M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
DIMM232,40
Clock Frequency-Max (fCLK)
1066 MHz