ELPIDA MEMORY INC EBR51EC8ABKD-8C | 搜芯易Sourcengine

ELPIDA MEMORY INC EBR51EC8ABKD-8C

生命周期状态
Transferred
说明
Rambus DRAM Module, 256MX18, 40ns, CMOS, PDMA232
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N232
Memory Width
18
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
RAMBUS DRAM MODULE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Memory Organization
256MX18
Number of Terminals
232
Terminal Pitch (mm)
1
Access Time-Max (ns)
40
Number of Words Code
256M
Memory Density (bits)
4831838208
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
268435456
Package Equivalence Code
DIMM232,40
Clock Frequency-Max (MHz)
800