ELPIDA MEMORY INC EBJ21UE8BDS0-AE-F | 搜芯易Sourcengine

ELPIDA MEMORY INC EBJ21UE8BDS0-AE-F

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
DRAM Module, 256MX64, CMOS
类别
Semiconductors Memory ICs DRAMs DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
30
Access Mode
DUAL BANK PAGE BURST
Length (mm)
67.6
JESD-30 Code
R-XDMA-N204
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Memory Organization
256MX64
Number of Functions
1
Number of Terminals
204
Terminal Pitch (mm)
0.6
Number of Words Code
256M
Memory Density (bits)
17179869184
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Seated Height-Max (mm)
3.8
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
268435456
Standby Current-Max (A)
0.208
Supply Current-Max (mA)
2640
Package Equivalence Code
DIMM204,24
Clock Frequency-Max (MHz)
533
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0