Diodes Incorporated DXTN3C100PSQ-13 | 搜芯易Sourcengine

Diodes Incorporated DXTN3C100PSQ-13

生命周期状态
Active
RoHS
符合RoHS标准
说明
NPN Low Sat Medium Power Transistor Automotive AEC-Q101
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F5
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e3
VCEsat-Max (V)
0.33
Case Connection
COLLECTOR
Terminal Finish
Matte Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
10
Power Dissipation-Max (W)
2.5
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
3
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
100
Transition Frequency-Nom (fT) (MHz)
140
Screening Level / Reference Standard
AEC-Q101