Diodes Incorporated DXT5551-13 | 搜芯易Sourcengine

Diodes Incorporated DXT5551-13

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans GP BJT NPN 160V 0.6A 1200mW 4-Pin(3+Tab) SOT-89 T/R
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e3
VCEsat-Max (V)
0.2
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
1.2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.6
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
160
Collector-base Capacitance-Max (pF)
6
Transition Frequency-Nom (fT) (MHz)
100
Screening Level / Reference Standard
MIL-STD-202
Time@Peak Reflow Temperature-Max (s)
30