M/A-COM INC DU28200M | 搜芯易Sourcengine

M/A-COM INC DU28200M

生命周期状态
Active
RoHS
符合RoHS标准
说明
TRANSISTOR,MOSFET,200W,28V,2-175
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F4
Configuration
N-Channel
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
13
Drain Current-Max (ID) (A)
20
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Feedback Cap-Max (Crss) (pF)
40
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Power Dissipation Ambient-Max (W)
389