ONSEMI DTC114Y | 搜芯易Sourcengine

ONSEMI DTC114Y

生命周期状态
Active
说明
TRANS DIGITAL BJT NPN 50V 100MA
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-PBCY-T3
Configuration
SINGLE WITH BUILT-IN RESISTOR
JEDEC-95 Code
TO-92
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 4.7
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
80
Power Dissipation-Max (W)
0.35
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
235
Collector Current-Max (IC) (A)
0.1
Collector-emitter Voltage-Max (V)
50