DALLAS SEMICONDUCTOR DS1350YP-70-IND | 搜芯易Sourcengine

DALLAS SEMICONDUCTOR DS1350YP-70-IND

生命周期状态
Transferred
说明
Non-Volatile SRAM Module, 512KX8, 70ns, MOS
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
MOS
JESD-30 Code
R-XDMA-U34
Memory Width
8
Output Enable
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
YES
Terminal Form
J INVERTED
Memory IC Type
NON-VOLATILE SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Additional Feature
10 YEAR DATA RETENTION
Memory Organization
512KX8
Number of Functions
1
Number of Terminals
34
Access Time-Max (ns)
70
Number of Words Code
512K
Memory Density (bits)
4194304
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
524288
Standby Current-Max (A)
0.00015
Supply Current-Max (mA)
85
Package Equivalence Code
MODULE,34LEAD,1.0
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40