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DS1270W-100-IND

DALLAS SEMICONDUCTOR

DALLAS SEMICONDUCTOR DS1270W-100-IND
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • Technology
    CMOS
  • JESD-30 Code
    R-PDIP-T36
  • Memory Width
    8
  • Package Code
    DIP
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • J-STD-609 Code
    e0
  • Memory IC Type
    NON-VOLATILE SRAM
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    DUAL
  • Memory Organization
    2MX8
  • Number of Terminals
    36
  • Terminal Pitch (mm)
    2.54
  • Access Time-Max (ns)
    100
  • Number of Words Code
    2M
  • Memory Density (bits)
    16777216
  • Package Body Material
    PLASTIC/EPOXY
  • Supply Voltage-Nom (V)
    3.3
  • Number of Words (words)
    2097152
  • Standby Current-Max (A)
    0.0002
  • Supply Current-Max (mA)
    50
  • Package Equivalence Code
    DIP36,.6
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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DS1270W-100-IND