DALLAS SEMICONDUCTOR DS1265Y-100 | 搜芯易Sourcengine

DALLAS SEMICONDUCTOR DS1265Y-100

生命周期状态
Transferred
说明
Non-Volatile SRAM Module, 1MX8, 100ns, CMOS
类别
Semiconductors Memory ICs SRAMs NON-VOLATILE SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
JESD-30 Code
R-XDIP-P36
Memory Width
8
Package Code
DIP
Output Enable
YES
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
PIN/PEG
J-STD-609 Code
e0
Memory IC Type
NON-VOLATILE SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
10 YEAR DATA RETENTION PERIOD
Memory Organization
1MX8
Number of Functions
1
Number of Terminals
36
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
100
Number of Words Code
1M
Memory Density (bits)
8388608
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
1048576
Standby Current-Max (A)
0.00015
Supply Current-Max (mA)
85
Package Equivalence Code
DIP36,.6
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0