MSI ELECTRONICS INC DO238B-3M | 搜芯易Sourcengine

MSI ELECTRONICS INC DO238B-3M

生命周期状态
Discontinued
说明
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 12V, Silicon, Abrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
O-LALF-W2
Configuration
SEPARATE, 3 ELEMENTS
Package Shape
ROUND
Package Style
LONG FORM Meter
Surface Mount
NO
Terminal Form
WIRE
Frequency Band
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Case Connection
ISOLATED
Terminal Position
AXIAL
Additional Feature
3% MATCHED SET OF THREE DIODES
Number of Elements
3
Quality Factor-Min
125
Diode Cap Tolerance
5 %
Number of Terminals
2
Reverse Current-Max
0.01 uA
Qualification Status
Not Qualified
Reverse Test Voltage
10 V
Breakdown Voltage-Min
12 V
Diode Capacitance-Nom
33 pF
Package Body Material
GLASS
Diode Element Material
SILICON
Diode Capacitance Ratio-Min
7