DN2625DK6-GM932
Supertex, Inc.
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 1.1A I(D), 250V, 3.5ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N8
- ConfigurationSEPARATE, 2 ELEMENTS
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Additional FeatureLOW THRESHOLD
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)1.1
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)30
- DS Breakdown Voltage-Min (V)250
- Feedback Cap-Max (Crss) (pF)70
- Turn-off Time-Max (toff) (ns)30
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)3.3
- Drain-source On Resistance-Max (ohm)3.5
DN2625DK6-GM932有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
DN2625DK6-GM932