Diodes Incorporated DMTH10H4M5LPSWQ-13 | 搜芯易Sourcengine

Diodes Incorporated DMTH10H4M5LPSWQ-13

生命周期状态
Active
RoHS
符合RoHS标准
说明
MOSFET BVDSS: 61V~100V POWERDI50
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
136
Drain Current-Max (ID) (A)
107
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
25.5
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
240
Pulsed Drain Current-Max (IDM) (A)
428
Drain-source On Resistance-Max (ohm)
0.0049
Screening Level / Reference Standard
AEC-Q101; IATF 16949; MIL-STD-202