Diodes Incorporated DMT32M6LDG-13 | 搜芯易Sourcengine

Diodes Incorporated DMT32M6LDG-13

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 47A I(D), 30V, 0.0025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-N8
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN SOURCE
Terminal Position
SINGLE
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.7
Drain Current-Max (ID) (A)
47
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
73
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
22
Pulsed Drain Current-Max (IDM) (A)
110
Drain-source On Resistance-Max (ohm)
0.0025
Screening Level / Reference Standard
MIL-STD-202