Diodes Incorporated DMT10H072LFV-13 | 搜芯易Sourcengine

Diodes Incorporated DMT10H072LFV-13

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-CH 100V PWRDI3333
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
37.8
Drain Current-Max (ID) (A)
20
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
2.5
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
1.8
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.062
Screening Level / Reference Standard
MIL-STD-202