Diodes Incorporated DMN65D8LFB-7 | 搜芯易Sourcengine

Diodes Incorporated DMN65D8LFB-7

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET N-CH 60V 0.4A 3-Pin X1-DFN T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
NICKEL PALLADIUM GOLD
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.84
Drain Current-Max (ID) (A)
0.26
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
4
Time@Peak Reflow Temperature-Max (s)
30