Diodes Incorporated DMN3055LFDBQ-7 | 搜芯易Sourcengine

Diodes Incorporated DMN3055LFDBQ-7

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET 2N-CH 30V 5A 6UDFN
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-PDSO-N6
Configuration
2 N-Channel (Dual)
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.36
Drain Current-Max (ID) (A)
5
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
44
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
6
Pulsed Drain Current-Max (IDM) (A)
25
Drain-source On Resistance-Max (ohm)
0.04
Screening Level / Reference Standard
AEC-Q101; IATF 16949