Diodes Incorporated DMN2450UFB4Q-7R | 搜芯易Sourcengine

Diodes Incorporated DMN2450UFB4Q-7R

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.9
Drain Current-Max (ID) (A)
1
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Feedback Cap-Max (Crss) (pF)
7.3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Drain-source On Resistance-Max (ohm)
0.4
Screening Level / Reference Standard
AEC-Q101; IATF 16949; MIL-STD-202