DMN1003UFDE-13
Diodes Incorporated
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明N-Channel Enhancement Mode MOSFET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)2.2
- Drain Current-Max (ID) (A)22
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)12
- Feedback Cap-Max (Crss) (pF)567
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)163
- Pulsed Drain Current-Max (IDM) (A)85
- Drain-source On Resistance-Max (ohm)0.003
- Screening Level / Reference StandardMIL-STD-202
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DMN1003UFDE-13