Diodes Incorporated DMJ70H1D3SK3-13 | 搜芯易Sourcengine

Diodes Incorporated DMJ70H1D3SK3-13

生命周期状态
EOL
RoHS
符合RoHS标准
说明
MOSFET BVDSS: 651V~800V TO252 T&
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Reference Standard
MIL-STD-202
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
4.7 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
2.8 pF
DS Breakdown Voltage-Min
700 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
57 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
29 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
1.4 ohm
Pulsed Drain Current-Max (IDM)
5 A