ENHANCED MEMORY SYSTEMS INC DM512K72DT6-12N | 搜芯易Sourcengine

ENHANCED MEMORY SYSTEMS INC DM512K72DT6-12N

生命周期状态
Discontinued
说明
Cache DRAM Module, 512KX72, 30ns, MOS
类别
Semiconductors Memory ICs DRAMs CACHE DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
MOS
Access Mode
FAST EDO/STATIC COLUMN
JESD-30 Code
R-XDMA-N168
Memory Width
72
Organization
512KX72
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
37748736 bit
Memory IC Type
CACHE DRAM MODULE
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Terminal Pitch
1.27 mm
Access Time-Max
30 ns
Number of Ports
1
Number of Words
524288 words
Seated Height-Max
38.1 mm
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/HIDDEN REFRESH
Supply Current-Max
2465 mA
Number of Functions
1
Number of Terminals
168
Standby Current-Max
0.011 Amp
Number of Words Code
512K
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Package Equivalence Code
DIMM168
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
5.25 V
Supply Voltage-Min (Vsup)
4.75 V
Supply Voltage-Nom (Vsup)
5 V