ENHANCED MEMORY SYSTEMS INC DM2M32SJ6-12I | 搜芯易Sourcengine

ENHANCED MEMORY SYSTEMS INC DM2M32SJ6-12I

生命周期状态
Discontinued
说明
Cache DRAM Module, 2MX32, 30ns, MOS
类别
Semiconductors Memory ICs DRAMs CACHE DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
MOS
Access Mode
FAST EDO/STATIC COLUMN
JESD-30 Code
R-XSMA-N72
Memory Width
32
Organization
2MX32
Package Code
SIMM
Self Refresh
NO
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
67108864 bit
Memory IC Type
CACHE DRAM MODULE
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Terminal Pitch
1.27 mm
Access Time-Max
30 ns
Number of Ports
1
Number of Words
2097152 words
Seated Height-Max
24.257 mm
Temperature Grade
INDUSTRIAL
Terminal Position
SINGLE
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Supply Current-Max
1440 mA
Number of Functions
1
Number of Terminals
72
Standby Current-Max
0.016 Amp
Number of Words Code
2M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Alternate Memory Width
16
Output Characteristics
3-STATE
Package Equivalence Code
SSIM72
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Max (Vsup)
5.25 V
Supply Voltage-Min (Vsup)
4.75 V
Supply Voltage-Nom (Vsup)
5 V