ENHANCED MEMORY SYSTEMS INC DM2242J2-15L | 搜芯易Sourcengine

ENHANCED MEMORY SYSTEMS INC DM2242J2-15L

生命周期状态
Discontinued
说明
Cache DRAM, 1MX4, 35ns, MOS, PDSO28
类别
Semiconductors Memory ICs DRAMs CACHE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
MOS
Access Mode
FAST EDO/STATIC COLUMN
JESD-30 Code
R-PDSO-J28
Memory Width
4
Organization
1MX4
Package Code
SOJ
Self Refresh
YES
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
Memory Density
4194304 bit
Memory IC Type
CACHE DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Terminal Pitch
1.27 mm
Access Time-Max
35 ns
Number of Ports
1
Number of Words
1048576 words
Terminal Finish
TIN LEAD
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; 2K X 4 SRAM
Supply Current-Max
180 mA
Number of Functions
1
Number of Terminals
28
Standby Current-Max
0.001 Amp
Number of Words Code
1M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
SOJ32,.34
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
5.25 V
Supply Voltage-Min (Vsup)
4.75 V
Supply Voltage-Nom (Vsup)
5 V