ENHANCED MEMORY SYSTEMS INC DM2200T1-12 | 搜芯易Sourcengine

ENHANCED MEMORY SYSTEMS INC DM2200T1-12

生命周期状态
Discontinued
说明
Cache DRAM, 4MX1, 30ns, MOS, PDSO44
类别
Semiconductors Memory ICs DRAMs CACHE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
MOS
Access Mode
FAST PAGE/STATIC COLUMN
JESD-30 Code
R-PDSO-G44
Memory Width
1
Organization
4MX1
Package Code
TSOP
Self Refresh
NO
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
4194304 bit
Memory IC Type
CACHE DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Terminal Pitch
0.8 mm
Access Time-Max
30 ns
Number of Ports
1
Number of Words
4194304 words
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2K X 1 SRAM
Supply Current-Max
225 mA
Number of Functions
1
Number of Terminals
44
Standby Current-Max
0.001 Amp
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
TSOP44,.36,32
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V