Yangjie Electronic Technology DGR40N120ATL0AQ | 搜芯易Sourcengine

Yangjie Electronic Technology DGR40N120ATL0AQ

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
2.4
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
625
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
101
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
260
Collector Current-Max (IC) (A)
80
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200