IXYS Corporation DE150-501N04A | 搜芯易Sourcengine

IXYS Corporation DE150-501N04A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF MOSFET N-CHANNEL DE150
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F6
Configuration
N-Channel
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
200
Drain Current-Max (ID) (A)
4.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Feedback Cap-Max (Crss) (pF)
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
27
Drain-source On Resistance-Max (ohm)
1.5
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED