Diodes Incorporated DDA123JU-7-F | 搜芯易Sourcengine

Diodes Incorporated DDA123JU-7-F

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans Digital BJT PNP 50V 100mA 200mW 6-Pin SOT-363 T/R
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR RATIO 21.36
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
80
Power Dissipation-Max (W)
0.2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.1
Collector-emitter Voltage-Max (V)
50
Transition Frequency-Nom (fT) (MHz)
250
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30