Diodes Incorporated DDA114EH-7 | 搜芯易Sourcengine

Diodes Incorporated DDA114EH-7

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
TRANS 2PNP PREBIAS 0.15W SOT563
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e3
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR RATIO 1
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
0.15
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.05
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50
Transition Frequency-Nom (fT) (MHz)
250
Time@Peak Reflow Temperature-Max (s)
30