INFINEON TECHNOLOGIES AG DD1200S12H4NPSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG DD1200S12H4NPSA1

生命周期状态
Active
说明
TRANSISTORS IGBTS
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
RECTIFIER DIODE
Application
GENERAL PURPOSE
JESD-30 Code
R-PUFM-X4
Configuration
2 Independent
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Number of Phases
1
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Output Current-Max (A)
1200.0000000000000000
Forward Voltage-Max (V)
2.3500000000000000
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Rep Pk Reverse Voltage-Max (V)
1200.0000000000000000
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Screening Level / Reference Standard
IEC-61140; UL APPROVED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED