GEC PLESSEY SEMICONDUCTORS DCR1374SBA10 | 搜芯易Sourcengine

GEC PLESSEY SEMICONDUCTORS DCR1374SBA10

生命周期状态
Transferred
说明
Silicon Controlled Rectifier, 2100A I(T), 1000V V(DRM)
类别
Semiconductors Trigger Devices Silicon Controlled Rectifiers SCR

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Trigger Device Type
SCR
Holding Current-Max (mA)
175
Leakage Current-Max (mA)
150
On-state Current-Max (A)
2100
DC Gate Trigger Voltage-Max (V)
3
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
DC Gate Trigger Current-Max (mA)
350
Non-Repetitive Pk On-state Cur (A)
40000
Repetitive Peak Off-state Voltage (V)
1000
Circuit Commutated Turn-off Time-Nom (us)
300
Critical Rate of Rise of Off-state Voltage-Min (V/us)
1000